A Miniature Ionization Vacuum Sensor With a SiOₓ-Based Tunneling Electron Source

IEEE Transactions on Electron Devices(2021)

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摘要
A miniature ionization vacuum sensor (IVS) based on an on-chip SiOx-based tunneling electron source is reported. The vacuum sensor fabricated by microfabrication technologies exhibits a compact multilayered structure with overall dimensions of $13\times 9\times2.7$ mm3, where the electron source chip, Si...
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关键词
Electron sources,Tunneling,Silicon,Electron emission,Discharges (electric),Semiconductor device measurement,Junctions
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