Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress
IEEE Electron Device Letters(2021)
摘要
Hot-carrier-induced degradation of short p-channel field-effect transistors in the presence of externally applied vertical mechanical force is investigated. The mechanical stress was induced in the devices by applying a normal load with a nanoindenter. Using finite element modeling, the induced stress to the channel was estimated to reach GPa range. It is shown that compressive mechanical stress c...
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关键词
Stress,Force,Logic gates,Hot carriers,Impact ionization,Performance evaluation,Electron traps
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