Experimental observation of pseudogap in a modulation-doped Mott insulator: Sn/Si(111)-(root 3 x 3)R30 degrees

CHINESE PHYSICS B(2022)

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摘要
Unusual quantum phenomena usually emerge upon doping Mott insulators. Using a molecular beam epitaxy system integrated with cryogenic scanning tunneling microscope, we investigate the electronic structure of a modulation-doped Mott insulator Sn/Si(111)-(root 3 x 3)R30 degrees. In underdoped regions, we observe a universal pseudogap opening around the Fermi level, which changes little with the applied magnetic field and the occurrence of Sn vacancies. The pseudogap gets smeared out at elevated temperatures and alters in size with the spatial confinement of the Mott insulating phase. Our findings, along with the previously observed superconductivity at a higher doping level, are highly reminiscent of the electronic phase diagram in the doped copper oxide compounds.
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关键词
pseudogap (PG), modulation doping, Mott insulator, scanning tunneling microscope (STM)
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