An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO 2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal–Insulator–Metal Capacitor

The operation speed of dynamic random access memory devices has been increasing with respect to the evolution of electronic devices. This in turn has induced a decrease in the allowed time for the operation. Therefore, the effective capacitance degradation in which the capacitance gradually decreases with increasing frequency of applied ac voltage is a severe concern for decreasing capacitance dur...