ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Wei-Min Wu,Shih-Hung Chen,Vamsi Putcha,Uthayasankaran Peralagu,Arturo Sibaja-Hernandez,Sachin Yadav,Bertrand Parvais,AliReza Alian,Nadine Collaert,Ming-Dou Ker,Guido Groeseneken

2021 43rd Annual EOS/ESD Symposium (EOS/ESD)（2021）

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摘要

In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD performance. Measurement results indicate TLP failures are highly related to 2DEG channel driving capability. The impacts of different gate interfaces in the GaN (MIS)-HEMTs on failure mechanisms are the key factor of final ESD robu...

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关键词

Failure analysis,HEMTs,Logic gates,Electrostatic discharges,Thermal conductivity,Robustness,Wide band gap semiconductors

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