Asymmetric carrier transport and weak localization in few layer graphene grown directly on a dielectric substrate

Temperature-dependent electrical and magneto-transport measurements have been performed on devices composed of few layer (4L) graphene grown directly on SiO2/Si substrates using the CVD method. An intrinsic energy band-gap of 4.6 meV in 4L graphene is observed, which primarily dictates the current transport at T T >50 K, which can be explained in the framework of the defect scattering of relativistic charge carriers. Magneto-transport measurements reveal a weak localization effect sustainable till T >200 K. The coexistence of phonon mediated carrier mobility and defect induced weak localization effects in measuring devices suggests low disorder and impurity scattering.