A Sub-k B T/q Dirac-source Graphene Nanoribbon Field-effect Transistor

2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2021)

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摘要
A sub-kB T/q Dirac-source (DS) graphene nanoribbon FET has been studied using a coupled mode-space non-equilibrium Green function solver employing $k \cdot p$ electronic structures. A 13 dimer wide armchair graphene nanoribbon (13-AGNR) FET connected to a semimetallic 162-AGNR source contact is simulated to study the physics of a proposed DSFET design. Density-of-states filtering at the...
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关键词
Filtering,Graphene,Field effect transistors,Doping,Nanoscale devices,Semiconductor process modeling,Green's function methods
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