Mechanism Investigation of Temperature Dependent Growth and Etching Process of GeCl 4 on SiGe Surface: ab-initio Study

Herein, we unveil the deposition and etch mechanism of GeCl4 on the SiGe surface. At the high temperature, GeCl4 is dissociated to GeCl2 and then worked as a deposition source. Thus, the rate determinant step of surface growth is GeCl4 dissociation, and a novel precursor that quickly dissociates to GeCl2 will be a proper precursor target to Ge growth at ...