Sub-Bandgap Photo-Response of Chromium Hyperdoped Black Silicon Photodetector Fabricated by Femtosecond Laser Pulses
IEEE Sensors Journal(2021)
摘要
As the main component of silicon (Si)-based Optic Electronics Integrated Circuit (OEIC) chip, Si-based infrared photodetector operating at communication wavebands is very important. In this paper, we report a kind of chromium (Cr)-hyperdoped black Si material fabricated using femtosecond laser pulses irradiation. The concentration of the Cr atoms in the black Si layer exceeds 1020 cm更多
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关键词
Silicon,Absorption,Substrates,Photodiodes,Impurities,Annealing,Atomic beams
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