Current controlled non-hysteresis magnetic switching in the absence of magnetic field

By means of local ion implantation, we investigated the influence of lateral interface on current induced magnetic switching by spin-orbit torque in a perpendicularly magnetized Pt/Co/Ta multilayer. The experimental results show that, in this system, the domain wall motion under electrical current can be affected by two mechanisms: symmetry breaking and current-driven Neel wall motion at the lateral interface. The dominant mechanism is symmetry breaking (current-driven Neel wall motion) at the large (small) current. Due to the competitive relationship of these two mechanisms, the non-hysteresis effect magnetic switching without an external magnetic field is obtained. Based on the non-hysteresis effect magnetic switching, we can realize AND and OR logic gates without resetting. Published under an exclusive license by AIP Publishing.