An Efficient W-Band Inp Dhbt Digital Power Amplifier

This paper presents for the first time high-efficiency W-band power amplifiers (PAs), the design of which follows the digital PA (DPA) design concept. Two DPAs with different output networks have been realized: a single-band version (S-DPA) for 95 GHz and a dual-band design (D-DPA) for signal frequencies f(S) of 68 GHz (first band) and 76 GHz (second band), respectively. The PAs are realized as monolithic microwave-integrated circuits (MMICs) in a 0.8 m InP DHBT transferred-substrate process. They utilize a double-emitter-finger DHBT unit cell with an emitter area of 2 x 0.8 x 6 m(3) each. In contrast to the usual W-band PAs, the proposed single-stage amplifier MMICs do not apply any special reactive matching for the transistor, which leads to very compact chip sizes of 0.27 mm(2) (S-DPA) and 0.39 mm(2)(D-DPA). The S-DPA includes one band-pass filter (BPF) at the output with 0.6 dB insertion loss (IL) and 24 dB input return loss (RL) at the signal frequency of 95 GHz. The dual-band BPF shows 0.7 dB IL in both bands with a RL of more than 21 dB each. Applying an overdriven sinusoidal input signal to emulate digital operation the DPAs achieve a maximum output power of 14.4 dBm and power-added efficiency of 31% when using the single-band configuration. Collector efficiencies of more than 80% and the flexible multi-band operation demonstrated prove the great potential of the digital PA concept for future high-speed communications.