High Performance Nanocrystalline Silicon Thin Film Transistors: Mechanical Device Reliability
IDW'10: PROCEEDINGS OF THE 17TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3(2010)
摘要
High performance nanocrystalline silicon thin film transistors (nc-Si TFTs) on polyimide (PI) substrate are demonstrated successfully. Mechanical reliability of nc-Si TFTs on PI shows an excellent characteristic than hydrogenated amorphous silicon (a-Si:H) TFTs. The TFT density of state proves that the shallow-level or deep-level defects originate from different bending directions.
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