Gaas Mosfet - Achievements And Challenges

The recent progress on GaAs metal oxide semiconductor field effect transistors (MOSFETs) using Ga2O3(Gd2O3) as the gate dielectric is reviewed. The interfacial oxide layers on GaAs were found to be a single crystal of pure Gd2O3. Drain currents in the inversion-channel devices were improved to 3 mA from 30 mu A in the first demonstrated MOSFET. For the first time, GaAs MOSFET's exhibit negligible drain current hysteresis and drift, an important aspect toward commercial applications. Excellent high-frequency characteristics and power performances were measured from the depletion-mode transistors.