Interface Chemistry And Thermoelectric Characterization Of Ti And Tio(X)Contacts To Mbe-Grown Wse2
2D MATERIALS(2020)
摘要
WSe(2)has demonstrated potential for applications in thermoelectric energy conversion. Optimization of such devices requires control over interfacial thermal and electrical transport properties. Ti, TiOx, and Ti/TiO(x)contacts to the MBE-grown WSe(2)are characterized by XPS and transport measurements. The deposition of Ti is found to result in W-Se bond scission yielding metallic W and Ti-Se chemical states. The deposition of Ti on WSe(2)in the presence of a partial pressure of O-2, which yields a TiO(x)overlayer, results in the formation of substoichiometric WSex(x< 2) as well as WOx. The thermal boundary conductance at Ti/WSe(2)contacts is found to be reduced for greater WSe(2)film thickness or when Au/TiO(x)interface is present at the contact. Electrical resistance of Au/Ti contacts is found to be higher than that of Au/TiO(x)contacts with no significant difference in the Seebeck coefficient between the two types of contact structures. This report documents the first experimental study of Ti/WSe(2)interface chemistry and thermoelectric properties.
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关键词
thermoelectric, MBE, XPS, WSe2, interface chemistry, contacts
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