Measurement of Volt-Ampere Characteristics of the Sipm on Wafer Level with Setup Based on the Pa200 Blueray Probe Station

Setup for measurement of volt-ampere characteristics of the Silicon photomultipliers (SiPMs) on wafer level consisting of the probe station PA200 BlueRay with embedded computer and SourceMeter Keithley 2400 was built. The setup is controlled by the homegrown software which allows adjustment of the measurements accuracy and speed. Firstly, complete I-V curves for a few samples of the chosen SiPM structure on the wafer are measured. Based on it the range of breakdown voltage and current level are defined which are used to correct the software settings. After that the whole wafer scan is made. The resulting I-V curves are used for SiPM selection (sorting) by current value at some predefined overvoltage (the difference between applied voltage and the breakdown one). Breakdown voltage is defined as: max ((dI/dU)/I).