Dopant Diffused Si Surface Passivation By H2s Gas Reaction And Quinhydrone-Methanol Treatment

Phosphorus (n(+)) and boron (p(+)) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H2S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J(0)), strongly depends on the diffusion type and the passivation method. H2S reaction at 550 degrees C passivates n(+) diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO2/SiNX), while QH-MeOH passivates p(+) diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide / silicon nitride stack (Al2O3/SiNX).