Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor

•Subthreshold Swings of 46 mV dec−1 at 300 K achieved in MoTe2 homojunction TFET.•A smaller supply voltage of 0.6 V (vs. 0.7 V for Silicon FET) is realized.•SS values are significantly lower than that in reported vdWs heterojunction devices.•Variations of I60 match well with theoretical tunneling model by WKB approximation.•A body factor of m = 0.21 achieved in band-to-band tunneling current branch.