Demonstration Of Beol-Compatible Ferroelectric Hf0.5zr0.5o2 Scaled Feram Co-Integrated With 130nm Cmos For Embedded Nvm Applications

We demonstrate successful scalability of conventional 100 mu m diameter TiN/HZO/TiN capacitors down to 300nm by successfully co-integrating them for the first time in the Back-End-Of-Line of 130nm CMOS technology. Excellent performance are reported on those scaled bitcells, such as remnant polarization 2.P-R > 40 mu C/cm(2), endurance > 10(11) cycles, switching speeds < 100ns, operating voltages < 4V, and data retention at 125 degrees C. Presented results pave the way to < 10fJ/bit ultra-low power FeRAM for IoT applications.