Effect of MOVPE growth conditions on AlN films on annealed sputtered AlN templates with nano-striped patterns

Journal of Crystal Growth(2021)

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摘要
•MOVPE growth of AlN films on nano-patterned face-to-face annealed sputtered AlN was demonstrated.•Low threading dislocation density achieved for 1 μm thick AlN film grown at 1300 °C.•Compressive strain was lower in the AlN film on FFA Sp-AlN with a nano-pattern than without.
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关键词
A3: Metalorganic vapor phase epitaxy,A2: Sputtering,B2: AlN,A1: Nano-patterned template,A1: Threading dislocation density
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