Numerical study on stress control of silicon ingot for photovoltaic applications

•Temperature gradient and thermal stress during silicon ingot casting.•Temperature gradient influences thermal stress generated during casting.•Lowest ingot stress at 6 kW E-beam, 0.02 mm/min growth, and −10 mm molten level.•Quasi-single crystalline silicon ingot produced via crystal growth simulation.•Produced ingot maintained [001] grain orientation and purity increased to 7N6.