Fermi Level Pinning And Band Bending In Delta-Doped Basno3

Various delta -doped semiconductor heterostructures have been effectively used for devices at room temperature and for quantum phenomena at low temperatures. Here, we use BaSnO3 and investigate its delta -doped system, focusing on its band bending and surface boundary conditions. We measured the two-dimensional carrier density (n(2D)) of the delta -doped BaSnO3 system of various thicknesses and doping levels. We also studied the effect of the BaSnO3 capping layer thickness on n(2D). We show that the delta -doped BaSnO3 system can be very well described by band bending with the aid of the Poisson-Schrodinger simulation. At the same time, the capping layer thickness dependence of n(2D) reveals how the boundary condition on the surface of La-doped BaSnO3 evolves as a function of its capping layer thickness.