Origin of the Out-of-Equilibrium Body Potential In Silicon on Insulator Devices With Metal Contacts

This work addresses the origin of the transient body potential variation in silicon on insulator (SOI) with deposited metal contacts, under back-gate bias sweep from accumulation to inversion. The phenomenon arises from the difficulty to inject carriers into the silicon film due to the Schottky contact between the metal and the low p-type doped silicon. The Schottky diode current is controlled by ...