Tightly Stacked 3D Diamond-Shaped Ge Nanowire Gate-All-Around FETs With Superior nFET and pFET Performance

Yi-Wen Lin,Hao-Hsiang Chang,Yu-Hsien Huang,Chong-Jhe Sun,Siao-Cheng Yan,Shan-Wen Lin,Guang-Li Luo,Chien-Ting Wu,Yung-Chun Wu,Fu-Ju Hou

IEEE Electron Device Letters（2021）

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摘要

We propose that the use of tightly stacked three-dimensional (3D) diamond-shaped Ge nanowire (NW) gate-all-around field-effect transistor (Ge-NW GAAFET) is a feasible approach to continuous scaling. The proposed devices with the Al2O3 dielectric exhibit high ISAT of 1200 $\boldsymbol {\mu } \text{A}/\boldsymbol {\mu } \te...

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关键词

Germanium,Logic gates,Etching,Three-dimensional displays,Metals,Bending,Tin

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