The Complementary FET (CFET) 6T-SRAM

IEEE Transactions on Electron Devices(2021)

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摘要
This article discusses complementary FET (CFET)-based static random access memory (SRAM) to achieve next-generation bitcell area scaling and performance gain in advanced CMOS technology nodes. SRAM bitcell area reduction, lower SRAM parasitic resistance, and higher drive strength are mandatory to continue SRAM scaling with technology advancement. The CFET reduces the SRAM bitcell area by folding n...
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关键词
Random access memory,Computer architecture,Resistance,Microprocessors,Delays,Logic gates,Capacitance
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