Paralleling Devices in a 13.56 MHz Class Φ 2 Inverter to Achieve Current Splitting and Improve Device Thermal Performance

This paper presents a comparison between the operation of a 13.56 MHz Class $\Phi_{2}$ inverter using one or multiple gallium nitride (GaN) switching devices in parallel. In high-frequency, high-power applications such as plasma generation, the GaN device is advantageous due to its low switching losses and on-resistance, evident in simulations. However, as the frequency and power increase, the pow...