High mobility in GaN MOSFETs with AlSiO gate dielectric and AlN mobility enhancement layer

Effective mobility in GaN recess-gate metal-oxide-semiconductor field-effect transistors (MOSFETs) with Al1-x Six O gate dielectric layers and AlN mobility enhancement layers is reported. Devices with AlN/Al0.23 Si0.77 O gate dielectric show maximum mobility of over 1000 cm2 V-1 s-1 at room temperature, rising to ~2800 cm...