Peculiarities of resistive switching in thin films of glassy SeTeSnGe system
Materials Science and Engineering: B（2022）
摘要
•Synthesis of amorphous thin films of novel third generation SeTeSnGe ovonic glasses.•Thermally governed resistive switching is observed for all thin film samples.•Presence of Compensation effect in resistive switching.•Absence of rigidity percolation in thin film samples as compared to bulk samples.
更多查看译文
关键词
Memory switching,Activation energy,Coordination number,Metallicity,Stoichiometry
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要