Effects of Interfacial Oxide Layer Formed by Annealing Process on WORM Characteristics of Ag/CuxO/SiOx/n+–Si Devices
Journal of Alloys and Compounds（2022）
Key words
Copper oxide,Silicon oxide,Resistive switching,Annealing,Interfacial layer
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined