Novel Device with Ultra Low Noise for Smaller CMOS Image Sensor Pixel

Minimize pixel noise is a very important topic to enhance signal to noise (S/N) ratio of CMOS image sensor (CIS), especially for smaller pixel. In this work, we have developed a novel device with self-aligned junction isolation (SAJI) and operated by buried channel. With optimized process and junction profile, this novel device can demonstrate better narrow width effect (NWE), lower flicker (1/f) noise and larger photodiode (PD) sensing area than STI device by surface channel.