Shapes of Ge and Si Particles Created on a Si/SiO2 Substrate by Lift-off Technique

The development of photonic devices based on the use of coatings that consist of ordered dielectric particle arrays is determined by the need to reduce their energy consumption and increase their efficiency. Unlike perforated metal coatings commonly used to control light intensity in optoelectronic structures, dielectric coatings result in a significantly less light dissipation. We develop a method for obtaining an ordered dielectric particle array without using the etching process. The method is based on the use of electronic lithography with the removal of excess material by “explosion”, that is by the lift-off method. We obtained arrays of Ge and Si particles sized from 100 to 400 nm on silicon substrates. It was found that the particle shape is determined by both the slope of the hole walls in the electron resist and the deposited material flow direction.