Theoretical Investigation for Growth of High Quality GaN on Epitaxial Graphene

GaN is one of the most important semiconductors with highly attractive properties. Efforts have been made for decades to grow high-quality GaN crystals, however, the quality is not good as Si crystal. This paper reports the theoretical possibilities of growing high-quality GaN on epitaxial graphene (EG). According to our findings, growing GaN on EG is really promising due to their hexagonal symmet...