Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis

In this work, 1.2kV SiC MOSFET integrated Junction-Barrier-Schottky diode (JMOS) is fabricated. The Schottky width is 2μm. The static characteristic of the JMOS is evaluated at room and elevated temperature. The single pulse avalanche robustness under Vgs= −5V is studied. Moreover, excessive gate leakage current is observed during the avalanche. The mechanism of gate leakage current is ...