Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs

Zuoheng Jiang,Mengyuan Hua,Xinran Huang,Lingling Li,Chengcai Wang,Junting Chen,Kevin J. Chen

IEEE Transactions on Power Electronics（2022）

引用 14|浏览5

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摘要

In this article, the impacts of the off-state gate bias (VGS,OFF) on dynamic on-resistance (RON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron-mobility transistors. Double-pulse tester and pulsed I–V system are adopted to evaluate the d...

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关键词

Logic gates,HEMTs,MODFETs,Switches,Stress,Degradation,Power system dynamics

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