Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

Nai-Wen Hsu,Wei-Chih Hou, Yen-Yang Chen,Yu-Jui Wu,Hsiang-Shun Kao,Charles Thomas Harris,Tzu-Ming Lu,Jiun-Yun Li

IEEE Transactions on Electron Devices（2022）

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摘要

Capacitance–voltage ( ${C}$ – ${V}$ ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at ${T}= {4} - {35}$ K are pre...

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关键词

Logic gates,Silicon,Capacitance,Tunneling,Charge carrier density,Voltage measurement,Temperature

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