ON-Resistance Analysis of GaN Reverse-Conducting HEMT With Distributive Built-In SBD

Jin Wei,Li Zhang,Zheyang Zheng,Wenjie Song,Song Yang,Kevin J. Chen

IEEE Transactions on Electron Devices（2022）

引用 5|浏览15

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摘要

Recently, a GaN reverse-conducting high-electron-mobility transistor (RC-HEMT) has been demonstrated. The RC-HEMT features built-in distributive Schottky contacts, which provide a low-loss freewheeling path. The RC-HEMT offers the same functionality as an HEMT/Schottky barrier diode (SBD) pair, but consumes much less chip area, thus its ${R}_{ \mathrm{\s...

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关键词

HEMTs,Logic gates,Resistance,Power transistors,Schottky diodes,Geometry,Transistors

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