Characterization of low temperature preparation of SrBi₂Ta₂O₉thin films by ECR plasma enhanced metalorganic chemical vapor deposition

We compared a directly crystallized SrBi2Ta2O9 film prepared by ECR-metalorganic chemical vapor deposition with that transformed by solid phase reaction from fluorite phase. The distribution of two times remanent polarization (2Pr) and coercive field (Ec) against Bi/Ta mole ratio of directly crystallized film from the gas phase was narrow compared with that crystallized by the solid phase reaction. Moreover, the Bi/Ta mole ratio showing the maximum 2Pr value was different in each preparation method. The crystallinity and orientation of directly crystallized SBT phase from the gas phase were strongly influenced by those of the substrate. Consequently, direct crystallization from the gas phase is one of the important techniques for lowering the crystallization temperature of SBT phase.