Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressorsWei-Chih Cheng,Minghao He,Siqi Lei,Liang Wang,Jingyi Wu,Fanming Zeng,Qiaoyu Hu,Qing Wang,Feng Zhao,Mansun Chan, Guangrui (Maggie) Xia,Hongyu YuSemiconductor Science and Technology(2020)引用 0|浏览0暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要