P‐16: Homojunction Indium–Gallium–Zinc Oxide Thin‐Film Transistors by Selective Simultaneous UV and Thermal Treatment

Hyung Tae Kim,Hyukjoon Yoo,Jeong Woo Park,Won-Gi Kim,Dong Hyun Choi,Hyun Jae Kim

Digest of technical papers（2020）

引用 0|浏览1

暂无评分

摘要

Indium–gallium–zinc oxide (IGZO) based thin‐film transistors (TFTs) are fabricated via selective simultaneous UV and thermal treatment (SSUT). SSUT is one‐step deposition process with activation and patterning for an active layer region of homojunction IGZO TFTs. As a result, the IGZO TFTs via SSUT showed the improved electrical characteristics.

查看译文

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要