Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga₂O₃ substrate*

We report the edge-defined-film-fed (EFG)-grown β-Ga2O3-based Schottky photodiodes. The device has a reverse leakage current of ∼nA and a rectified ratio of ∼104 at ± 5 V. In addition, the photodiode detector shows a dark current of 0.3 pA, a photo-responsivity (R) of 2.875 mA/W, a special detectivity (D *) of 1010 Jones, and an external quantum efficiency (EQE) of 1.4% at zero bias, illustrating a self-powered operation. This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.