Fabrication of a laser diode at 1600 nm with InAs quantum dots using a digital embedding method on an InP(311)B substrate (Conference Presentation)

In this study, we fabricated QD laser diodes using a digital embedding method (DEM) in which InAs QDs were embedded in an InGaAs/InAlAs superlattice whose miniband acts as an effective barrier for the QDs. We stacked 15 QD layers by using DEM with four monolayers in each InGaAs/InAlAs superlattice. The stripe laser structures were fabricated using conventional laser diode processes. The laser with a 600-µm cavity showed lasing at 1600 nm with a threshold current of 474 mA. The internal loss of this laser was 16.2 cm-1, which was similar that of the laser that uses a conventional quaternary InGaAlAs barrier material.