Investigation of the Degradation Rate in DPSA Bipolar Transistor under Gamma Irradiation

2018 International Conference on Radiation Effects of Electronic Devices (ICREED)(2018)

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摘要
We present the dose-rate effect and emitter size effect of DPSA bipolar transistors under gamma ray irradiation. Results indicated there have an ELDRS effect exist and the effects are discussed from the perspective of degradation rate.
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关键词
Degradation Rate,ELDRS,Excess base current,Bipolar Transistor
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