Wafer Surface Control for Ru Capping on Cu Interconnect
2020 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC)(2020)
摘要
Ru capping process was demonstrated on 48nm-pitch Cu damascene interconnect with area selective deposition technique of Ru CVD. Ru nucleation and film continuity were optimized by process including wet cleaning and dry surface treatments. Physical analysis and line leakage electrical test were conducted to evaluate Ru capping layer for different process conditions.
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关键词
Ru,Capping Layer,Area Selective Deposition
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