Phase-Change Material RF Switches and Monolithic Integration in 180 nm RF-SOI CMOS Processes

Improvements to the PCM RF switch process and design have resulted in increased OFF-state power handling and cycling endurance. These switches demonstrate less than 12 fs $R_{ON}{}^{\ast}C_{OFF}$ with 26.5 dBm and 28 dBm ON and OFF-state power handling, respectively, for a single $10\ \mu \mathrm{m}$ device. The cycling endurance has also been improved, with full wafer endura...