Multiscale Modeling of Al_0.7Sc_0.3N-based FeRAM the Steep Switching, Leakage and Selector-free Array

In this work, by experiments and material calculations, the steep polarization switching and the leakage in ferroelectric Al0.7Sc0.3N are investigated. The material calculations suggest that the tight distribution of the coercive field is attributed to highly uniform material with well-aligned domains. The electron emission and hopping assisted by N vacancies in the Al0.7Sc0.3N layer dominate the leakage current. For the first time, a circuit model of Al0.7Sc0.3N-based FeRAM, reflecting the frequency dependent coercive field and leakage, is established to project the behavior of the selector-free array, and analyzing the dependence of the latency and the read window on the device area, line resistance and the array size.