Rubidium Fluoride Absorber Treatment for Wide-Gap (Ag,Cu)(In,Ga)Se-2 Solar Cells

This contribution studies the potential of an RbF postdeposition treatment (RbF-PDT) of wide-gap (Ag,Cu)(In,Ga)Se-2 (ACIGS) absorbers to improve the corresponding solar cell performance. While a higher open-circuit voltage (V-OC) and short-circuit current density are achieved, a lower fill factor (FF) is observed for most of the devices subjected to an RbF-PDT. However, the drop in FF can be avoided for some close-stoichiometric samples, leading to maximum efficiencies beyond 16% (without antireflection coating) at a bandgap energy (E-g) of 1.43 eV. For off-stoichiometric ACIGS, a record V-OC value of 926 mV at E-g = 1.44 eV is reached. Lower V-OC deficits likely require enhanced bulk quality of wide-gap chalcopyrite absorbers. Extensive material analysis shows that the heavy alkali PDT of ACIGS with high Ag and Ga contents leads to similar absorber modifications as commonly observed for low-gap Cu(In,Ga)Se-2 (CIGS). Rubidium is continuously distributed at "internal" (grain boundaries) and "external" (buffer and back contact) absorber interfaces. The results indicate that Rb diffusion into the absorber bulk (including 1:1:2 and 1:3:5 compounds) is restricted. Furthermore, the formation of a very thin RbInSe2 surface layer is suggested. It remains open, which effects alter the device characteristics after RbF-PDT.