Towards a Characterization of Vulnerability of XCR4C ASIC on Heavy-Ion Induced Transient Events

Bo Li,Bo Lu,Huo Jia,Yong Chen,Fengyuan Zhang,Zexin SU, Jantou Gao,Chunlin Wang,Wenxin Zhao,Hainan Liu

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)（2019）

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摘要

Transients with durations of dozens of seconds in a rad-hard four-channel CDS ASIC (XCR4C) for X-ray CCD were observed during $^{181}\mathbf{Ta}^{31+}$ ions irradiation and were attributed to the complementary feedback mechanism in the bias circuit.

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关键词

Charge coupled devices,Radiation effects,Negative feedback,Radiation hardening (electronics),Europe,Ions,Transient analysis

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