Physicochemical-microstructural approach for modeling the crack passage at topside metallic parts in IGBT semiconductor power electronics

Insulated-gate bipolar transistors (IGBTs) are widely used components in power electronics applications. Upon operation, the difference in thermal expansion coefficients of materials composing the upper metallic parts causes thermal fatigue. The latter leads to degradations at metallic topside interconnections through the formation of cracks [1]. This paper focuses on a new physicochemical-microst...