Nonvolatile and Voltage-Polarity-Independent Write-Once–Read-Many-Times Memory Feature of an Al/AlOₓ:N/n⁺-Si Device
IEEE Transactions on Electron Devices（2022）
Key words
Grippers,Voltage measurement,Resistance,Electrodes,Switches,Writing,Voltage,Aluminum oxynitride,oxygen vacancy (VO),oxynitridation,resistive memory,write-once-read-many-times (WORM)
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