Impact of Charge Balance on Static and Dynamic Characteristics of GaN Super-Heterojunction Schottky Barrier Diodes

Jesse T. Kemmerling, Rian Guan,Mansura Sadek,Sundar Isukapati,Woongje Sung,Sang-Woo Han,Rongming Chu

IEEE Electron Device Letters（2022）

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摘要

This letter reports the first controlled experimental study on the impact of charge-balance on static and dynamic characteristics of GaN super-heterojunction Schottky barrier diodes (SHJ-SBD). Charge balance between p- and n-type doped GaN for reducing peak E-field can be optimized via charge-balance etching (CBE) of the p-GaN SHJ region to improve dynamic 更多

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关键词

Switches,Degradation,Gallium nitride,Current measurement,Voltage measurement,Schottky diodes,Resistance

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