Contacts to Two-dimensional Materials: Image Forces, Dielectric Environment, and Back-gate

Madhuchhanda Brahma,Maarten L. Van de Put,Edward Chen,Massimo V. Fischetti,William G. Vandenberghe

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)（2022）

引用 0|浏览1

暂无评分

摘要

We calculate the resistivity in back-gated metal-transition metal dichalcogenide (TMD) edge contacts in which the carrier injection is governed by the Schottky barrier at the interface. We keep the channel undoped and change the back-gate bias to electrostatically dope the channel. We use the electrostatic potential obtained from the numerical solution of the Poisson equation. We calculate the tra...

查看译文

关键词

Resistance,Poisson equations,Image edge detection,Schottky barriers,Green products,Metals,Doping

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要